 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Preliminary data BUZ 103SL-4 SIPMOS (R) Power Transistor * Quad-channel * Enhancement mode * Logic level * Avalanche-rated * dv/dt rated Type BUZ 103SL-4 VDS 55 V ID 4.8 A RDS(on) 0.055 Package P-DSO-28 Ordering Code C67078-S. . . .- . . Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 4.8 Unit A ID IDpuls 19.2 TA = 25 C Pulsed drain current one channel active TA = 25 C Avalanche energy, single pulse EAS 140 dv/dt 6 mJ ID = 4.8 A, VDD = 25 V, RGS = 25 L = 12 mH, Tj = 25 C Reverse diode dv/dt kV/s IS = 4.8 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C Gate source voltage Power dissipation ,one channel active VGS Ptot 14 2.4 V W TA = 25 C Operating temperature Storage temperature IEC climatic category, DIN IEC 68-1 Tj Tstg -55 ... + 175 -55 ... + 175 55 / 175 / 56 C Semiconductor Group 1 05/Sep/1997 Preliminary data BUZ 103SL-4 Thermal Characteristics Parameter Symbol min. Thermal resistance, junction - soldering point 1) Thermal resistance, junction - ambient 2) Values typ. tbd 62.5 max. K/W Unit RthJS RthJA - 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70m thick) copper area for Drain connection. PCB is vertical without blown air. 2) one channel active Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 55 1.6 0.1 10 0.0403 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 50 A Zero gate voltage drain current IDSS 0.1 1 100 A VDS = 55 V, VGS = 0 V, Tj = -40 C VDS = 55 V, VGS = 0 V, Tj = 25 C VDS = 55 V, VGS = 0 V, Tj = 150 C Gate-source leakage current IGSS 100 nA 0.055 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 5 V, ID = 4.8 A Semiconductor Group 2 05/Sep/1997 Preliminary data BUZ 103SL-4 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs tbd 770 230 130 - S pF 960 290 165 ns 50 75 VDS 2 * ID * RDS(on)max, ID = 0 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 5 V, ID = 4.8 A RG = 6.5 Rise time tr 30 45 VDD = 30 V, VGS = 5 V, ID = 4.8 A RG = 6.5 Turn-off delay time td(off) 20 30 VDD = 30 V, VGS = 5 V, ID = 4.8 A RG = 6.5 Fall time tf 40 1.33 20 32.6 2.94 60 nC 2 30 50 V 3 05/Sep/1997 VDD = 30 V, VGS = 5 V, ID = 4.8 A RG = 6.5 Gate charge at threshold Qg(th) Qg(5) - VDD = 40 V, ID 0.1 A, VGS =0 to 1 V Gate charge at 5.0 V VDD = 40 V, ID = 4.8 A, VGS =0 to 5 V Gate charge total Qg(total) - VDD = 40 V, ID = 4.8 A, VGS =0 to 10 V Gate plateau voltage V(plateau) VDD = 40 V, ID = 28 A Semiconductor Group Preliminary data BUZ 103SL-4 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TA = 25 C Inverse diode direct current, pulsed A 0.9 55 93 4.8 19.2 V 1.6 ns 85 nC 140 Values typ. max. Unit ISM VSD trr Qrr TA = 25 C Inverse diode forward voltage VGS = 0 V, IF = 9.6 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 05/Sep/1997 Preliminary data BUZ 103SL-4 Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS 5 V 5.0 A 2.8 W 2.4 Ptot 2.2 2.0 1.8 ID 4.0 3.5 3.0 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 C 180 0.5 0.0 0 20 40 60 80 100 120 140 C 180 1.5 1.0 2.5 2.0 TA TA Safe operating area ID = (VDS) parameter: D = 0, TC = 25C 10 2 = on ) Transient thermal impedance Zth JA = (tp) parameter: D = tp / T 10 2 K/W tp = 1.4ms /I D VD S A R ( DS 10 1 ID 10 1 10 ms ZthJC 10 0 10 -1 10 0 10 -2 D = 0.50 10 -3 0.20 0.10 10 -1 DC 10 -4 0.05 0.02 10 -5 single pulse 0.01 10 -2 0 10 10 1 V 10 2 10 -6 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 VDS tp Semiconductor Group 5 05/Sep/1997 Preliminary data BUZ 103SL-4 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 11 A Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.17 Ptot = 2W j li k hf e g d VGS [V] a 2.0 b c 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10.0 a b ID 9 8 7 6 5 4 3 2 c 0.14 RDS (on) 0.12 d e f g h i j k l 0.10 0.08 c d e f g hi j 0.06 0.04 VGS [V] = a 2.5 2.0 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i j 7.0 8.0 10.0 0.02 1 b 0 a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.00 0 2 4 6 8 A 11 VDS ID Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 s VDS2 x ID x RDS(on)max 90 A ID 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 05/Sep/1997 Preliminary data BUZ 103SL-4 Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 4.8 A, VGS = 5 V 0.15 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 50 A 4.6 V 4.0 0.13 RDS (on)0.12 0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 -60 VGS(th) 3.6 3.2 2.8 98% 2.4 98% 2.0 typ 1.6 typ 2% 1.2 0.8 0.4 -20 20 60 100 C 180 0.0 -60 -20 20 60 100 C 180 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s 10 3 A C pF IF 10 2 10 3 Ciss 10 1 Tj = 25 C typ Tj = 175 C typ Coss Crss 5 10 15 20 25 30 V 40 VDS Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 05/Sep/1997 Preliminary data BUZ 103SL-4 Avalanche energy EAS = (Tj) parameter: ID = 4.8 A, VDD = 25 V RGS = 25 , L = 12 mH 150 mJ 130 Typ. gate charge VGS = (QGate) parameter: ID puls = 5 A 16 V EAS 120 110 100 90 80 70 60 50 40 30 20 10 0 20 VGS 12 10 8 0,2 VDS max 0,8 VDS max 6 4 2 0 0 40 60 80 100 120 140 C 180 5 10 15 20 25 30 35 40 nC 50 Tj QGate Drain-source breakdown voltage V(BR)DSS = (Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 C 180 Tj Semiconductor Group 8 05/Sep/1997 |
Price & Availability of BUZ103SL-4
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |